Article ID Journal Published Year Pages File Type
1790199 Journal of Crystal Growth 2015 5 Pages PDF
Abstract

•GaN layers were homoepitaxially MOCVD grown on N-face free-standing substrates.•A high-quality smooth layer was obtained with optimized growth process.•Epilayers have improved donor-bound exciton recombination time.

GaN layers were homoepitaxially grown on N-face free-standing GaN substrates using a hot-wall metalorganic chemical vapor deposition method. By using optimized growth parameters, layers with a smooth morphology were obtained. The crystalline quality of epilayers was studied by a high resolution X-ray diffraction technique and compared to the substrates. Optical properties of the epilayers studied by low temperature time-resolved photoluminescence have shown longer recombination time for donor-bound exciton compared to the substrates.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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