Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1790199 | Journal of Crystal Growth | 2015 | 5 Pages |
•GaN layers were homoepitaxially MOCVD grown on N-face free-standing substrates.•A high-quality smooth layer was obtained with optimized growth process.•Epilayers have improved donor-bound exciton recombination time.
GaN layers were homoepitaxially grown on N-face free-standing GaN substrates using a hot-wall metalorganic chemical vapor deposition method. By using optimized growth parameters, layers with a smooth morphology were obtained. The crystalline quality of epilayers was studied by a high resolution X-ray diffraction technique and compared to the substrates. Optical properties of the epilayers studied by low temperature time-resolved photoluminescence have shown longer recombination time for donor-bound exciton compared to the substrates.