Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1790229 | Journal of Crystal Growth | 2015 | 4 Pages |
•Higher concentration of Te antisite-related deep donors was found in the tail.•The compensation of deep-level defects results in low concentration of net free electrons.•High resistivity with n-type conduction was demonstrated.•Hall mobility is lower in the tail due to higher concentration of deep donors.
We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between InCd+ defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I–V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.