Article ID Journal Published Year Pages File Type
1790320 Journal of Crystal Growth 2014 4 Pages PDF
Abstract

•A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding.•Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the thin neck.•The c-axis sapphire crystals with main bodies free from low-angle grain boundaries were grown.

A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding. Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the thin neck, and the c-axis sapphire crystals with main bodies free from low-angle grain boundaries were grown.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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