Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1790320 | Journal of Crystal Growth | 2014 | 4 Pages |
Abstract
•A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding.•Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the thin neck.•The c-axis sapphire crystals with main bodies free from low-angle grain boundaries were grown.
A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding. Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the thin neck, and the c-axis sapphire crystals with main bodies free from low-angle grain boundaries were grown.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
K. Hoshikawa, T. Taishi, E. Ohba, C. Miyagawa, T. Kobayashi, J. Yanagisawa, M. Shinozuka,