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Molecular orientation transformation of pentacene on amorphous SiO2: A computational study on the initial growth stage of physical vapor deposition

Article ID Journal Published Year Pages File Type
1790414 Journal of Crystal Growth 2014 8 Pages PDF
Keywords
A1. Computer simulationA1. Growth modelsA3. Physical vapor deposition processesB3. Field effect transistors
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Preview
Molecular orientation transformation of pentacene on amorphous SiO2: A computational study on the initial growth stage of physical vapor deposition
Authors
Yuanqi Zeng, Bo Tao, Zhouping Yin,
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Journal
Journal of Crystal Growth
Journal: Journal of Crystal Growth
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A1. Computer simulation
A1. Growth models
A3. Physical vapor deposition processes
B3. Field effect transistors
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