Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1790435 | Journal of Crystal Growth | 2014 | 4 Pages |
Abstract
•InAs1−xNx films were grown on InAs substrates by liquid phase epitaxy.•One third of InN powder is placed under the initial melt homogeneously.•The N content of InAs1−xNx film is up to 0.66%.
A series of InAs1−xNx films have been successfully grown on (100) oriented InAs substrates by liquid phase epitaxy technique. Samples with different nitrogen contents have been analyzed by high-resolution x-ray diffraction measurement, which confirms the incorporation of N in the epilayers. N-related modes are detected in the Raman spectra of InAs1−xNx epilayers. The fundamental absorption edges of InAs1−xNx films obtained by Fourier transform infrared transmission spectroscopy exhibit a red-shift compared with that of InAs homoepilayer.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y.F. Lv, S.H. Hu, X.Y. Yang, Y. Wang, C.H. Sun, F. Qiu, R. Cong, W.J. Dong, Y. Zhang, G.L. Yu, N. Dai,