Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1790481 | Journal of Crystal Growth | 2014 | 4 Pages |
Abstract
We investigated the effect of H2 ratio in carrier gas on oxygen concentration, crystallinity and threading dislocation density (TDD) in GaN layers synthesized from Ga2O vapor and NH3. SIMS analysis revealed that the oxygen concentration in GaN layers decreased with increasing H2 ratios, and achieved 8.72Ã1017 atoms/cc with a growth rate of 50 μm/h when the H2 ratio was 80%. The full width at half maximum (FWHM) and TDD decreased with increasing H2 ratios. To explain these results, we explored the growth mode at the initial growth stage in H2 ambient, and found that the nucleation rate of the GaN crystal decreased in H2 ambient, resulting in the improvement of crystallinity.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yuan Bu, Mamoru Imade, Akira Kitamoto, Masashi Yoshimura, Masashi Isemura, Yusuke Mori,