Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1790486 | Journal of Crystal Growth | 2014 | 9 Pages |
Abstract
The effect of GaAs (1 0 0) substrate misorientation on metamorphic high electron mobility transistor nanoheterostructure In0.64Al0.3As/In0.7Ga0.3As properties was studied by the means of Hall measurements, photoluminescence spectroscopy, X-ray diffraction, TEM and STEM measurements. The identical heterostructures with step-graded metamorphic buffer InAlAs were grown by MBE on (1 0 0) GaAs substrates exactly oriented and 2° misoriented towards [0 â1 â1] direction and the detailed comparison of electronic and structural properties was performed. The increase of electron density by 40% was found in the heterostructure grown on misoriented GaAs substrate though Si doping concentration in δ-layers was the same for both samples. In addition the substrate misorientation affected some of the heterostructure structural properties: the QW heterointerfaces were found to be more broadened, the residual strain in the In0.64Al0.36As barrier region was higher and the surface morphology was rougher in the heterostructure on (1 0 0)+2° substrate as compared to that on the (1 0 0) GaAs substrate.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
G.B. Galiev, I.S. Vasil'evskii, E.Ð. Klimov, S.S. Pushkarev, A.N. Klochkov, P.P Maltsev, M.Yu. Presniakov, I.N. Trunkin, A.L. Vasiliev,