Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates

The growing interest in modern energy-saving illuminants for general lighting, multimedia applications and automotive industry demands for alternative low-cost substrates for MOVPE LED growth. Nitride MOVPE growth is possible on the Si (111) plane, which makes Si substrates attractive as an alternative to sapphire substrates. A novel technology is presented using patterned Si (100) substrates, in which MOVPE-grown LED structures are fabricated on Si {111} facets tilted by 54.7°. Structural and optical properties are discussed and correlated to epitaxial growth conditions. It is shown that crystal quality reaches already a reasonable level for preliminary LED operation.