Article ID Journal Published Year Pages File Type
1790521 Journal of Crystal Growth 2014 5 Pages PDF
Abstract

•GaInAsBi/AlInAs quantum structures were grown on InP:Fe by molecular beam epitaxy.•The maximum bismuth content in the GaInAsBi wells was 5.0%.•The longest emission wavelength registered for GaInAsBi wells reached 2.4 µm.

5 nm, 10 nm and 20 nm-thick GaInAsBi quantum wells were grown on the InP:Fe(100) substrates by molecular beam epitaxy. The top and bottom barriers of quantum structures were 50 nm and 100 nm-thick lattice-matched AlInAs, respectively. Quantum wells were grown at the substrate temperature of about 240 °C. The maximum bismuth content in the wells was 5.0%. Transmission electron microscopy images revealed sharp interfaces between the wells and barrier layers as well as homogeneous Bi incorporation. Photoluminescence (PL) measurements demonstrated signals from all QW up to the room temperature. PL intensity was stronger in thinner quantum wells where relaxation and clustering effects were avoided. The longest emission wavelength registered reached 2.4 µm.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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