Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multicrystalline silicon ingots by the directional solidification process

Article ID	Journal	Published Year	Pages	File Type
1790615	Journal of Crystal Growth	2014	8 Pages	PDF

Abstract

âº Multicrystalline silicon ingot growth. âº Concentrations of oxygen and carbon in the silicon melt. âº Impurity transport under the effect of a gas flow guidance device. âº Optimum position for the gas guidance device to obtain the lowest impurities.

Keywords

A1. Heat transfer A1. Mass transfer A1. Computer simulation A1. Impurities B3. Solar cells

Related Topics

Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics

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Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multicrystalline silicon ingots by the directional solidification process

Authors

Ying-Yang Teng, Jyh-Chen Chen, Bo-Siang Huang, Ching-Hsin Chang,