Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1790644 | Journal of Crystal Growth | 2014 | 5 Pages |
Abstract
The density of nanoholes created by self-assembled Al droplet etching of AlAs surfaces during molecular beam epitaxy is studied. We find a clear decrease of the hole density with increasing etching temperature T up to a threshold temperature T=620°C. At T>620°C, the hole density saturates at a minimum of 2Ã108cmâ2. We attribute this saturation to a change of the AlAs surface reconstruction. On the other hand, at reduced T, hole densities up to 2Ã109cmâ2 have been achieved. However, this hole density increase is accompanied by a reduction of the hole depth. To generate high density holes with larger depth suited for quantum dot fabrication, we have studied the effect of repeated etching steps.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J. Kerbst, Ch. Heyn, T. Slobodskyy, W. Hansen,