Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1790650 | Journal of Crystal Growth | 2014 | 5 Pages |
Abstract
We present a study of indium phosphide nanowires grown by the selective area vapor liquid solid technique using metalorganic molecular beam epitaxy. Transmission electron microscopy revealed that nanowires grown at a temperature of up to 450 °C had a pure wurtzite structure, but at 480 °C a mixed wurtzite-zincblend structure was obtained. We also accurately measured the migration length of growth precursors along the side facets of the nanowires by monitoring the length of the non-tapered section of the nanowire adjacent to the gold catalyst. The migration length was found to be of the order of 0.3-0.7 µm and to depend on the diameter of the nanowire. Up to the growth temperature of 450 °C the migration length was temperature independent, but it increased dramatically to more than 2 µm when the nanowires were grown at 480 °C. Possible explanations for the observed effects are suggested.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Ya'akov Greenberg, Alex Kelrich, Yonatan Calahorra, Shimon Cohen, Dan Ritter,