Article ID Journal Published Year Pages File Type
1790764 Journal of Crystal Growth 2013 4 Pages PDF
Abstract
► We have studied plasma-assisted electroepitaxy (PAEE). ► We have demonstrated continuous GaN layers by PAEE from liquid Ga melt. ► We have tried to use PAEE for the growth of InN layers.
Keywords
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Preview
Plasma-assisted molecular beam epitaxy process combined with a liquid phase electroepitaxy, a novel method for the growth of GaN layers
Authors
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