Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1790769 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠We measured a difference in the surface stress between Si(111) 7Ã7 and Si(111) 1Ã1. ⺠Surface stress during Ge wetting layer growth on Si(111) 7Ã7 and on H-terminated Si(111) 1Ã1. ⺠Combined the surface-curvature and RHEED instrumentations in an identical system. ⺠Si(111) 1Ã1 surface releases 1.6 N/m (1.3 eV/(1Ã1 unit cell)) of the surface energy from tensile Si(111) 7Ã7 reconstruction.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Hidehito Asaoka, Tatsuya Yamazaki, Yuta Yokoyama, Kenji Yamaguchi,