Article ID Journal Published Year Pages File Type
1790769 Journal of Crystal Growth 2013 4 Pages PDF
Abstract
► We measured a difference in the surface stress between Si(111) 7×7 and Si(111) 1×1. ► Surface stress during Ge wetting layer growth on Si(111) 7×7 and on H-terminated Si(111) 1×1. ► Combined the surface-curvature and RHEED instrumentations in an identical system. ► Si(111) 1×1 surface releases 1.6 N/m (1.3 eV/(1×1 unit cell)) of the surface energy from tensile Si(111) 7×7 reconstruction.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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