| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1790778 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠InAsSbN single quantum wells grown on InP substrates byMBE were studied. ⺠Optimum Sb composition is 2% in the case that the nitrogen composition is 1%. ⺠Laser operation was achieved for the InAsSbN SQW laser diode structure at 2.36 μm at 220 K.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Takuya Shono, Shogo Mizuta, Yuichi Kawamura,