Quantitative estimation of density of Bi-induced localized states in GaAs1−xBix grown by molecular beam epitaxy

► The density of Bi-induced localized states in GaAsBi was evaluated by measuring PL. ► Variations in the Fermi levels reveal the density of localized states. ► The density of the Bi-induced levels is estimated to be ∼1×1017 cm−3. ► ∼2×10−4 of the incorporated Bi atoms contribute to the formation of localized states.