| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1790781 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠Fullerene doped GaAs layers are grown by a MEE method. ⺠In HRTEM images, the C60 doped GaAs layers have no defect. ⺠The EELS spectrum indicates that the LUMO of C60 molecules is active even in GaAs lattices. ⺠At low temperatures, the resonant excitation between C60 traps and GaAs bands may occur.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jiro Nishinaga, Yoshiji Horikoshi,