| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1790787 | Journal of Crystal Growth | 2013 | 4 Pages |
In this work, we present a Raman scattering study of GaAs layers grown on (6̄3̄1̄)-oriented substrates by molecular beam epitaxy. A set of samples whose morphology sustained different corrugation order were grown by MBE by varying the growth parameters such as temperature and As/Ga flux ratio. We employed polarized Raman spectroscopy using the backscattering configurations Z(XX ) Z¯, Z(XY ) Z¯ and Z(YY )Z¯. According to the calculated dipole selection rules both TO and LO phonons are allowed for backscattering from a perfect GaAs (6̄3̄1̄) crystal, but with the intensity of the TO phonon much larger than that of the LO phonon. However, it is found that the selection rules differ for corrugated samples. Besides, the TO/LO phonon resonances intensity ratio and the LO peak asymmetry depend on the corrugation order of the samples.
► The self-assembled surface corrugation of GaAs (6̄3̄1̄) was analyzed by Raman spectroscopy (RS). ► The calculated RS selection rules for GaAs (6̄3̄1̄) differs from experiment due to the one-dimensional phonon confinement. ► The TO/LO phonon asymmetry depends on the corrugation order of the samples.
