Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars

Article ID	Journal	Published Year	Pages	File Type
1790788	Journal of Crystal Growth	2013	4 Pages	PDF

Abstract

âº Integration of (In,Ga)As/GaAs QWs on GaAs, Ge/Si and Ge/Si micropillars is compared. âº On micropillars annihilation of anti-phase domains is found for vicinal substrates. âº Photoluminescence of different structures is studied and compared. âº By simulation PL peaks are assigned to interband transitions in three pairs of QWs.

Keywords

A1. Nanostructures A3. Superlattices A3. Molecular Beam Epitaxy A3. Quantum wells B2. Semiconducting gallium arsenide B2. Semiconducting silicon

Related Topics

Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics

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Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars

Authors

M. Richter, E. Uccelli, A.G. Taboada, D. Caimi, N. Daix, M. Sousa, C. Marchiori, H. Siegwart, C.V. Falub, H. von Känel, F. Isa, G. Isella, A. Pezous, A. Dommann, P. Niedermann, J. Fompeyrine,