| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1790791 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠GaSb was grown by MBE method on InP substrate without crosshatch. ⺠Thicker GaSb included less threading dislocations. ⺠Crystalline quality of InAs/GaSb SL on InP substrate was improved by using thick GaSb buffer layer. ⺠SL grown on InP substrate showed clear PL peak.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
K. Miura, Y. Iguchi, Y. Kawamura,