| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 1790795 | Journal of Crystal Growth | 2013 | 4 Pages | 
Abstract
												⺠GaDyN/GaN double-barrier magnetic tunneling junctions (DB-MTJs) structures are grown by the MBE method. ⺠Ferromagnetism is confirmed at room temperature for the GaDyN quantum wells. ⺠It is found that the interlayer interaction exists between the GaDyN quantumwells.
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											Authors
												M. Sano, Y.K. Zhou, S. Emura, S. Hasegawa, H. Asahi, 
											