| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1790796 | Journal of Crystal Growth | 2013 | 4 Pages |
We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optimization of the growth temperatures of the compositionally graded InGaP layer and the indium content in the top metamorphic InGaP layer, almost fully relaxed metamorphic layer was obtained with surface roughness of only about 2.17 nm. Strong photoluminescence signals were measured from both InGaAs quantum well and InAs quantum dots embedded in the metamorphic layer, indicating that the top metamorphic layer had low density of threading dislocations.
► InGaP metamorphic layer grown by gas source molecular beam epitaxy on GaAs. ► The growth conditions of InGaP metamorphic layer have been optimized. ► Fully relaxed InGaP metamorphic layer with smooth surface was obtained. ► Strong PL emissions observed from a InGaAs QW or InAs QDs in the InGaP layer.
