| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1790798 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠GaNAs/GaAs p-i-n junctions were successfully fabricated by RF-MBE. ⺠Clear rectification property was observed in I-V curves of the GaNAs/GaAs p-i-n junctions. ⺠Electroluminescence (EL) measurements showed different spectra to those of photoluminescence. ⺠EL intensities were almost proportional to the applied currents. ⺠Room temperature EL measurement revealed strong electron confinement of the GaNAs/GaAs MQW.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Natsumi Ohta, Kohei Arimoto, Masahiro Shiraga, Kenta Ishii, Masatoshi Inada, Shunsuke Yanai, Yuko Nakai, Hidefumi Akiyama, Toshimitsu Mochizuki, Toshio Takahashi, Naoshi Takahashi, Hayato Miyagawa, Noriaki Tsurumachi, Shunsuke Nakanishi, Shyun Koshiba,