Article ID Journal Published Year Pages File Type
1790809 Journal of Crystal Growth 2013 5 Pages PDF
Abstract
► BaSi2 films were epitaxially grown on Si(111). ► Growth condition for BaSi2 template layers was optimized. ► Grain size of BaSi2 epitaxial layers exceeded 4 μm.
Keywords
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Preview
Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy
Authors
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