| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1790811 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠B-doped BaSi2 films were grown by molecular beam epitaxy. ⺠B-doped BaSi2 showed p-type conductivity. ⺠The hole concentration was controlled in the range between 1017 and 1019 cmâ3. ⺠The acceptor level was approximately 23 meV.
Related Topics
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Condensed Matter Physics
Authors
M. Ajmal Khan, Kosuke O. Hara, Kotaro Nakamura, Weijie Du, Masakazu Baba, Katsuaki Toh, Mitsushi Suzuno, Kaoru Toko, Noritaka Usami, Takashi Suemasu,