Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy

Strain relaxation of thin Ge layers grown by carbon-mediated epitaxy at 50 °C on Si(001) was investigated for a multi-step growth procedure. Additionally, the impact of the post-growth annealing temperature on the strain relaxation obtained for a single carbon-mediated growth step was analyzed. The degree of relaxation was monitored in situ by reflection high energy electron diffraction and ex situ by high-resolution x-ray diffraction and transmission electron microscopy. For multi-step growth, relaxation occurs mainly during the first cycle (growth and annealing). Full relaxation is already achieved after 3–4 cycles. The relaxation process during a single growth cycle can be divided into three sections: annealing up to 200 °C is sufficient to trigger most of the strain relaxation. After annealing up to 450 °C, the film lattice parameter already equals the Ge bulk value, though the layer shows a rough surface. Only an annealing step up to 650 °C results in a smooth surface and interface. Smooth and fully relaxed Ge films of only 26 nm thicknesses were obtained by carbon-mediated growth.

► Strain relaxation in carbon-mediated epitaxy of Ge films on Si(001) was analyzed. ► Degree of relaxation was characterized by RHEED, HRXRD and TEM. ► Smooth and fully relaxed Ge films of only 26 nm thickness were obtained. ► Periodic network of full edge dislocations forms at the interface during annealing. ► Annealing up to 650 °C leads to a smooth surface plus improved structural perfection.