| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1790830 | Journal of Crystal Growth | 2013 | 5 Pages |
Abstract
⺠True-blue InAlGaN laser diodes by plasma assisted molecular beam epitaxy. ⺠LDs operate at 450 - 460 nm in cw mode with optical output power up to 80 mW. ⺠The role of active nitrogen for growth of InGaN is investigated.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C. Skierbiszewski, M. Siekacz, H. Turski, G. Muziol, M. Sawicka, P. Perlin, Z.R. Wasilewski, S. Porowski,