| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1790841 | Journal of Crystal Growth | 2013 | 6 Pages |
Abstract
Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.
► Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. ► Bi incorporation for 2% is achieved. ► Up to 70% of the incorporated Bi atoms are at substitutional sites. ► Strong In and Ga inter-diffusion induced by Bi incorporation is observed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yuxin Song, Shumin Wang, Ivy Saha Roy, Peixiong Shi, Anders Hallen, Zonghe Lai,