| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1790853 | Journal of Crystal Growth | 2013 | 5 Pages |
Abstract
⺠Ge-doped β-FeSi2 epitaxial films on Si(1 1 1) substrates were grown by molecular beam epitaxy. ⺠The optimized growth temperature (Ts) and Si/Fe flux ratio were Ts=500 °C and Si/Fe=0.5. ⺠The lattice constant and the direct transition energy shifted with Ge concentration. ⺠These results revealed the successful growth of β-Fe(Si1âxGex)2 epitaxial films.
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Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Keiichi Noda, Yoshikazu Terai, Yasufumi Fujiwara,