| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791026 | Journal of Crystal Growth | 2013 | 6 Pages |
Abstract
⺠Phase control of (112¯2) and (112¯0) GaN grown on r-plane CPSS is studied. ⺠Growth competition between (112¯2) and (112¯0) GaN is severely influenced by the nucleation temperature. ⺠Optimized completion of a-plane (112¯0) GaN enables a smooth surface on r-plane CPSS.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Mei-Tan Wang, Frank Brunner, Kuan-Yung Liao, Yun-Li Li, Snow H. Tseng, Markus Weyers,