Vapor–liquid–solid growth of thick 2H–SiC layers under CH4 continuous flow

We attempted the vapor–liquid–solid (VLS) growth of single-phase 2H–SiC thick layers in Li–Si solution under CH4 continuous flow. The thickness of liquid phase epitaxy (LPE) layers increased linearly with the CH4 flowing period without slowing of the growth rate, reaching 270 μm (45 μm/h). Furthermore, a high growth temperature of 1180 °C and optimum partial pressure of CH4 gas allowed an increase in the thickness of the LPE layers, resulting in a thickness of 850 μm. A high resolution transmission electron microscope (HR-TEM) and X-ray diffraction (XRD) measurements showed that these LPE layers were a 2H–SiC polytype. We concluded that VLS growth in Li–Si solution under CH4 continuous flow is useful for the long-term growth of a thick 2H–SiC layer.

The thick 2H–SiC layer could be grown in Li–Si solution under CH4 continuous flow. ► The thickness of the liquid phase epitaxial layer increased linearly with the growth period. ► High-temperature growth with low partial pressure of CH4 increased the thickness of the LPE layer. ► The thickness of LPE layer reached 850 μm for 3.5 h, i.e. the growth rate was as high as 240 μm/h. ► HR-TEM and XRD measurements showed that these LPE layers were a 2H–SiC polytype.