| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791060 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠AlGaN/GaN DBR structures were grown by MOVPE for RC-LED applications. ⺠Crack-free DBR stack centered at 384 nm with a 90% reflectivity was demonstrated. ⺠Smooth surfaces with atomic steps and terraces with low surface roughness were obtained. ⺠Coherently strained DBR structure was obtained with a good structural quality. ⺠TEM analysis revealed a homogeneous GaN and AlGaN layers with flat and abrupt interfaces.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
T. Moudakir, S. Gautier, S. Suresh, M. Abid, Y. El Gmili, G. Patriarche, K. Pantzas, D. Troadec, J. Jacquet, F. Genty, P. Voss, A. Ougazzaden,