Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence

We investigated the deep level photoluminescence and cathodoluminescence emissions from GaInP grown on Ge and Ge-on-Si substrates by metal-organic chemical vapor deposition. Considering the interface condition after the growth of GaInP on Ge, we speculated that the P vacancies and/or Ge atoms from the underlying layer due to interdiffusion were responsible for the deep level emissions. Moreover, the anti-phase boundaries in GaInP, incompletely suppressed even when grown on off-axis Ge substrates, were also responsible for the deep level emissions.

► We observed the deep level emissions from the GaInP on Ge in PL and CL. ► The origins of the deep level emission were associated with the interface between GaInP and Ge. ► The P vacancies and/or Ge-related complexes were responsible for the deep level emissions. ► Moreover, incompletely suppressed APBs in the GaInP were another origin of deep level emissions.