| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791094 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠We studied the vicinal Ge(100) surface after annealing in TBP in a MOVPE reactor. ⺠The P-terminated Ge(100) surface exhibits a characteristic in situ RA spectrum. ⺠We benchmarked the RA spectra to results from XPS and LEED. ⺠RAS allows to study adsorption and desorption of P on the vicinal Ge(100) surface in situ.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Enrique Barrigón, Sebastian Brückner, Oliver Supplie, Henning Döscher, Ignacio Rey-Stolle, Thomas Hannappel,