| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791095 | Journal of Crystal Growth | 2013 | 5 Pages |
Abstract
⺠GaSb and Ga1âxInxSb layers were grown with different V/III ratios at 550 °C. ⺠Triethylgallium, trimethylantimony and trimethylindium were used as precursors.⺠All the growth runs were performed under atmospheric pressure. ⺠The dependence of the quality of the layers on the V/III ratio was investigated. ⺠An increase in the V/III yields an increase in the incorporation of indium into GaSb.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S.S. Miya, V. Wagener, J.R. Botha,