| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791101 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠Compressive strain in GaAs0.6P0.4 grown on GaP substrate was relaxed by plane slips. ⺠Compressive strain in GaAs grown on GaP substrate was relaxed by formation of island structures. ⺠GaAs surface is much flatter than that of GaAsP. ⺠Controlling of strain relaxation mechanism is a method to achieve planar surfaces. ⺠Different relaxation methods were explained by critical thickness and transition thickness models.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Xiuguang Jin, Shingo Fuchi, Yoshikazu Takeda,