| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791109 | Journal of Crystal Growth | 2013 | 4 Pages |
In this paper we present the epitaxial growth and characterization of an InP-based micro-cavity light emitting diode (LED) with up to 3 μm light emission by using GaInAs/GaAsSb-based type-II quantum wells. The LED was grown by LP-MOVPE and achieves emission from 2 μm to 3 μm at room-temperature. Furthermore a second LED with centered emission at 2.8 μm has been realized. Hence, the achievable long-wavelength electroluminescence emission with InP-based materials has been extended up to 3 μm.
► InP-based LED grown by LP-MOVPE emits from 2 μm to 3 μm at room-temperature and continuous wave operation. ► Long wavelength emission is achieved by using GaAsSb/GaInAs type-II quantum wells grown at 500 °C. ► Emission is stable up to 80 °C and output power is in the order of tens of μW.
