| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791111 | Journal of Crystal Growth | 2013 | 5 Pages |
Abstract
⺠GaN epilayers were grown on Si(111) at 980 °C by hydride vapor phase epitaxy (HVPE). ⺠High GaCl flow rate can increase the growth rate and improve the surface morphology. ⺠High NH3 flow rate is not good for reducing dislocations. ⺠1.22 μm-GaN layer without crack was obtained with a three-step growth method. ⺠The FWHM of GaN(0002) is 599 arcsec.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Juan Wang, Heui-Bum Ryu, Mi-Seon Park, Won-Jae Lee, Young-Jun Choi, Hae-Yong Lee,