| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791130 | Journal of Crystal Growth | 2013 | 6 Pages |
Abstract
⺠SA-MOVPE of InN nanostructures on pre-patterned SiO2/GaN/sapphire templates is demonstrated. ⺠High selectivity is achieved in a small growth temperature range around 650 °C. ⺠InN nanopyramids evolve from coalesced seeds via cauldron-like structures within mask openings. ⺠The PL band edge luminescence characteristics depend on the nanostructure growth stage. ⺠Just fully developed nanopyramids exhibit lowest PL peak energy.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Andreas Winden, Martin Mikulics, Toma Stoica, Martina von der Ahe, Gregor Mussler, Anna Haab, Detlev Grützmacher, Hilde Hardtdegen,