| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791131 | Journal of Crystal Growth | 2013 | 6 Pages |
Post-annealing treatment in nitrogen gas flow has been carried out for P-doped Zn1−xMgxTe layer grown under a Te-rich or Te-poor condition by metalorganic vapor phase epitaxy. The electrical and photoluminescence properties of P-doped Zn1−xMgxTe layers are altered by annealing treatment. The post-annealing is very effective in obtaining p-type conductive Zn1−xMgxTe for the layer grown under a Te-poor condition. On the other hand, Zn1−xMgxTe layer is characterized by a high compensation ratio and DAP luminescence for the layer grown under a Te-rich condition, even after annealing treatment. Similar tendencies are also found in P-doped ZnTe layers.
► The post-annealing treatment is effective for obtaining p-type conductive Zn1−xMgxTe. ► The properties of the layers grown under Te-poor condition are improved effectively. ► The layers grown under Te-rich condition shows a high compensation ratio. ► Similar tendencies are also found in P-doped ZnTe layers.
