| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791153 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠TlInGaAsN samples were grown by gas-source molecular-beam epitaxy on GaAs (001) substrate. ⺠The change of N-related defects in TlInGaAsN after annealing was investigated by X-ray photoelectron spectroscopy (XPS). ⺠Annealing treatment reduces the defect concentration and induces a significant improvement in the PL efficiency.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Kang Min Kim, Woo-Byoung Kim, Daivasigamani Krishnamurthy, Jeong Ho Ryu, Shigehiko Hasegawa, Hajime Asahi,