| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791161 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠AlN epitaxial lateral overgrowth has been performed successfully. ⺠Faster and more homogeneous coalescence for sapphire miscut 0.25° m compared to 0.25° a. ⺠A low V/III ratio increases the lateral growth rate. ⺠Coalescence thickness is clearly determinable in-situ.
Related Topics
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Condensed Matter Physics
Authors
V. Kueller, A. Knauer, U. Zeimer, M. Kneissl, M. Weyers,