Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN

We have studied growth and self-separation of bulk GaN on c-oriented Al2O3 using low temperature (LT) GaN buffer layers. By studying the X-ray diffraction (XRD) signature for the asymmetric and symmetric reflections versus the LT-GaN thickness and V/III precursor ratio, we observe that the peak width of the reflections is minimized using a LT buffer thickness of ∼100–300 nm. It was observed that the V/III precursor ratio has a strong influence on the morphology. In order to obtain a smooth morphology, the V/III precursor ratio has to be more than 17 during the growth of the buffer layer. By using an optimized LT buffer layer for growth of a 20 μm thick GaN layer, we obtain a XRD peak with a full width at half maximum of ∼400 and ∼250 arcs for (002) and (105) reflection planes, respectively, and with a dark pit density of ∼2.2×108 cm−2. For layers thicker than 1 mm, the GaN was spontaneously separated and by utilizing this process, thick free freestanding 2″ GaN substrates were manufactured.

► We study the growth of 2 in. bulk GaN on c-Al2O3 using low temperature GaN buffer layers. ► The thickness and V/III precursor ratio used for the buffer layer influence the GaN morphology. ► The best crystalline quality of GaN was obtained with a buffer using a V/III ratio >17. ► With increasing thickness of fully coalesced buffer layers, a degradation of GaN is observed. ► Using an optimized buffer, we have produced freestanding 2 in. GaN substrates by self-separation.