| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791272 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
⺠Elemental nitridation process of α-Al2O3 surface is theoretically investigated. ⺠N atoms are easily incorporated on the α-Al2O3 (0001) surface under pregrowth conditions. ⺠The N adatoms are found to be easily substituted for O atoms located beneath the surface to form the AlN layer. ⺠The O desorption is crucial for nitridation process of α-Al2O3. ⺠Calculated result is consistent with some experimental findings reported previously.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yasutaka Saito, Toru Akiyama, Kohji Nakamura, Tomonori Ito,