| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791326 | Journal of Crystal Growth | 2013 | 6 Pages |
In this study, relationship between the hole mobility in strained SiGe/Si(110) heterostructure and crystalline morphology was investigated. The SiGe layers with different Ge compositions were grown by solid-source molecular beam epitaxy, and morphological aspects in terms of lattice strain, surface morphology and defect formation were studied. It was found that strain relaxation in the [1¯10] and the [001] directions were different. The strain relaxation in the [001] direction was found to be relevant to the strain-induced generation of planar defects, while such a mechanism was not evidenced for the orthogonal direction. The hole mobilities in the samples were evaluated using IV and split CV methods, and their dependences on the channel direction and the Ge composition were investigated. The planar defects were found to have detrimental effect on the hole conduction in the [001] direction. On the other hand, improvement of the hole mobility was confirmed in a pMOSFET, which was fabricated on a Si0.78Ge0.22 film and had a [1¯10]-oriented channel.
► Evolution of crystalline morphology of SiGe/Si(110) heterostructure was studied. ► Orientation-dependent strain relaxation mechanism was found. ► High hole mobility in SiGe/Si(110) pMOSFET with a [1̄10]-oriented channel. ► The effect of planar defects on the hole transport was studied.
