Article ID Journal Published Year Pages File Type
1791330 Journal of Crystal Growth 2013 4 Pages PDF
Abstract
► Novel method to extract the local carrier generation and recombination lifetime from forward characteristics of diode. ► Leakage current relates to the defects in the depletion region of p-n junction. ► Implantation step generate defects. ► The electrically active defects have been studied from the activation energy by analyzing the carrier lifetime.
Keywords
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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The local generation and recombination lifetime based on forward diode characteristics diagnostics
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