| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791385 | Journal of Crystal Growth | 2013 | 5 Pages |
In this paper a thermodynamic–kinetic model of the MOCVD growth process of InGaAs/GaAs heterostructures with quantum wells using Ga(C2H5)3–In(CH3)3–AsH3Ga(C2H5)3–In(CH3)3–AsH3 system materials was worked out. The effect of segregation broadening was taken into account in that model. Using this model, methods of considerable decreasing of indium segregation were investigated.
► The model of MOCVD growth of InGaAs/GaAs heterostructures with quantum wells was developed. ► The model allows obtaining the concentration profiles of the quantum wells taking into account In segregation. ► We have analyzed processes of pre-deposition of In and etching purging for reduction of In segregation. ► We have proposed using hydrogen chloride in purging instead of carbon tetrachloride.
