| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791405 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
⺠Lift-off of epitaxial GaN was demonstrated by regrowth over nanoporous GaN. ⺠Nanopores transformed into nano voids during the high temperature regrowth. ⺠Nano voids coalesced into an empty space for lift-off. ⺠Strain in GaN-on-nothing structure was characterized.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jin-Ho Kang, June Key Lee, Sang-Wan Ryu,