Article ID Journal Published Year Pages File Type
1791470 Journal of Crystal Growth 2012 5 Pages PDF
Abstract
► We performed polytype-selective growth of 3C-SiC and 6H-SiC by controlling supersaturation. ► The growth rates of 3C-SiC and 6H-SiC had different dependences on supersaturation. ► 3C-SiC grew covering the 6H-SiC seeds completely at a high supersaturation. ► Our kinetics-based polytype control is quite different from conventional technique.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
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