Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

AlN layers were grown on (0001) sapphire substrates by hydride vapor phase epitaxy (HVPE) at 1100 °C with a source gas supply sequence of (1) NH3 preflow or (2) AlCl3 preflow. An Al-polarity AlN layer without inclusion of a N-polarity region was grown when AlCl3 was preflown to the sapphire surface prior to AlN growth, while N- and Al-polarity regions were both present in the same AlN layer when NH3 was preflown, since growth was performed on a nitrided sapphire surface. Compared with the AlN layers grown with NH3 preflow, the Al-polarity AlN layers grown with AlCl3 preflow had improved crystalline structural quality, a low concentration of oxygen impurity, and a photoabsorption edge energy of 6.08 eV, which is close to an ideal value. Therefore, the source gas supply sequence has a significant influence on the growth of AlN layers on (0001) sapphire substrates. Thus, preflow of AlCl3 gas to a sapphire surface prior to AlN growth is a key process for high crystalline quality AlN layer growth with uniform Al-polarity on (0001) sapphire substrates by HVPE.

► When AlN is grown with NH3 preflow, both N- and Al-polarity AlN regions are present. ► When AlN is grown with AlCl3 preflow, Al-polarity AlN without incorporation of N-polarity regions can be grown. ► The AlN layer grown with AlCl3 preflow had higher crystalline quality than NH3 preflow. ► AlCl3 preflow prior to HVPE growth of AlN is quite effective for growing high-quality AlN layers on (0001) sapphire substrates.